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    參數(shù)資料
    

    


    


    
型號(hào)：
MTD6N20ET5G

    

    
廠商：
ON SEMICONDUCTOR

    

    
元件分類：
JFETs

    

    
英文描述：
6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET

    

    
封裝：
ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3

    

    
文件頁(yè)數(shù)：
1/9頁(yè)

    

    
文件大小：
129K

    

    
代理商：
MTD6N20ET5G


    

    

    

	
    
    
    

    
    
	
     Semiconductor Components Industries, LLC, 2010
    October, 2010  Rev. 5
    1
    Publication Order Number:
    MTD6N20E/D
    MTD6N20E
    Power MOSFET
    6 A, 200 V, NChannel DPAK
    This advanced Power MOSFET is designed to withstand high
    energy in the avalanche and commutation modes. The new energy
    efficient design also offers a draintosource diode with a fast
    recovery time. Designed for low voltage, high speed switching
    applications in power supplies, converters and PWM motor controls,
    these devices are particularly well suited for bridge circuits where
    diode speed and commutating safe operating areas are critical and
    offer additional safety margin against unexpected voltage transients.
    Features
     Avalanche Energy Specified
     SourcetoDrain Diode Recovery Time Comparable to a
    Discrete Fast Recovery Diode
     Diode is Characterized for Use in Bridge Circuits
     IDSS and VDS(on) Specified at Elevated Temperature
     These Devices are PbFree and are RoHS Compliant
    MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
    Rating
    Symbol
    Value
    Unit
    DraintoSource Voltage
    VDSS
    200
    Vdc
    DraintoGate Voltage (RGS = 1.0 MW)
    VDGR
    200
    Vdc
    GatetoSource Voltage
     Continuous
     Nonrepetitive (tp ≤ 10 ms)
    VGS
    VGSM
    ± 20
    ± 40
    Vdc
    Vpk
    Drain Current
     Continuous
     Continuous @ 100°C
     Single Pulse (tp ≤ 10 ms)
    ID
    IDM
    6.0
    3.8
    18
    Adc
    Apk
    Total Power Dissipation
    Derate above 25°C
    Total Power Dissipation @ TA = 25°C (Note 2)
    PD
    50
    0.4
    1.75
    W
    W/°C
    W
    Operating and Storage Temperature Range
    TJ, Tstg
    55 to
    150
    °C
    Single Pulse DraintoSource Avalanche
    Energy  Starting TJ = 25°C
    (VDD = 80 Vdc, VGS = 10 Vdc,
    IL = 6.0 Apk, L = 3.0 mH, RG = 25 W)
    EAS
    54
    mJ
    Thermal Resistance  JunctiontoCase
     JunctiontoAmbient (Note 1)
     JunctiontoAmbient (Note 2)
    RqJC
    RqJA
    2.50
    100
    71.4
    °C/W
    Maximum Temperature for Soldering
    Purposes, 1/8″ from case for 10 secs
    TL
    260
    °C
    Stresses exceeding Maximum Ratings may damage the device. Maximum
    Ratings are stress ratings only. Functional operation above the Recommended
    Operating Conditions is not implied. Extended exposure to stresses above the
    Recommended Operating Conditions may affect device reliability.
    1. When surface mounted to an FR4 board using the minimum recommended
    pad size.
    2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.
    *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
    Techniques Reference Manual, SOLDERRM/D.
    http://onsemi.com
    6 AMPERES, 200 VOLTS
    RDS(on) = 460 mW
    NChannel
    D
    S
    G
    1
    Gate
    3
    Source
    2
    Drain
    4 Drain
    DPAK
    CASE 369C
    STYLE 2
    MARKING
    DIAGRAMS
    6N20E Device Code
    Y
    = Year
    WW
    = Work Week
    G
    = PbFree Package
    YWW
    6
    N20EG
    1 2
    3
    4
    YWW
    6
    N20EG
    1
    Gate
    3
    Source
    2
    Drain
    4 Drain
    DPAK
    CASE 369D
    STYLE 2
    1
    2
    3
    4
    See detailed ordering and shipping information in the package
    dimensions section on page 7 of this data sheet.
    ORDERING INFORMATION
    
    
    
    
    
    


    


    

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