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參數(shù)資料
| 型號(hào)： | MTD6N20ET5G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大小： | 129K |
| 代理商： | MTD6N20ET5G |
MTD6N20E
http://onsemi.com
8
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C01
ISSUE D
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
RECOMMENDED FOOTPRINT*
b
D
E
b3
L3
L4
b2
e
M
0.005 (0.13)
C
c2
A
c
C
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
D
0.235
0.245
5.97
6.22
E
0.250
0.265
6.35
6.73
A
0.086
0.094
2.18
2.38
b
0.025
0.035
0.63
0.89
c2
0.018
0.024
0.46
0.61
b2
0.030
0.045
0.76
1.14
c
0.018
0.024
0.46
0.61
e
0.090 BSC
2.29 BSC
b3
0.180
0.215
4.57
5.46
L4
0.040
1.01
L
0.055
0.070
1.40
1.78
L3
0.035
0.050
0.89
1.27
Z
0.155
3.93
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12
3
4
H
0.370
0.410
9.40
10.41
A1 0.000
0.005
0.00
0.13
L1
0.108 REF
2.74 REF
L2
0.020 BSC
0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW
5
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