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參數(shù)資料
| 型號： | MTDF2N06HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 187K |
| 代理商： | MTDF2N06HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistor
Micro8
devices are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density TMOS process and contain
monolithic back–to–back zener diodes. These zener diodes provide
protection against ESD and unexpected transients. These miniature
surface mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode has
a very low reverse recovery time. Typical applications are dc–dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature Micro8 Surface Mount Package — Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Continuous Drain Current @ TA = 25°C (1)
Pulsed Drain Current (2)
ID
IDM
1.5
12
Adc
Total Power Dissipation @ TA = 25°C (1)
PD
1.25
W
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Continuous Source Current (Diode Conduction) (3)
IS
0.9
Adc
THERMAL RESISTANCE
Junction–to–Ambient (1)
R
θJA
100
°C/W
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) Repetitive rating; pulse width limited by maximum junction temperature.
(3) When mounted on FR–4 board, t
≤ 10 seconds
DEVICE MARKING
ORDERING INFORMATION
BD
Device
Reel Size
Tape Width
Quantity
BD
MTDF2N06HDR2
13
″
12 mm embossed tape
4000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and Micro8 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTDF2N06HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
CASE 846A–02, Style 2
MICRO–8
MTDF2N06HD
DUAL TMOS
POWER MOSFET
1.5 AMPERES
60 VOLTS
RDS(on) = 220 mW
Motorola Preferred Device
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
D
S
G
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相關代理商/技術參數(shù) |
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|---|---|
| MTD-H5 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:QuickCarrier? USB-D 零件狀態(tài):Not Recommended For New Designs 功能:收發(fā)器，HSPA，調(diào)制解調(diào)器 調(diào)制或協(xié)議:HSPA+ 頻率:850MHz，900MHz，1.7GHz，1.9GHz，2.1GHz 應用:- 接口:USB 靈敏度:- 功率 - 輸出:- 數(shù)據(jù)速率（最大值）:21Mbps 特性:USB 供電 電壓 - 電源:5V，USB 標準包裝:10 |
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| MTDK1S6R | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N-CHANNEL MOSFET (dual transistors) |
| MTDK3S6R | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:ESD protected N-CHANNEL MOSFET |
| MTDM8148CCYE2 | 制造商:Texas Instruments 功能描述:CENTAURUS 3.0W |
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