參數(shù)資料
型號： MTDF2N06HDR2
廠商： MOTOROLA INC
元件分類： 小信號晶體管
英文描述： 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù)： 4/10頁
文件大?。?/td> 187K
代理商： MTDF2N06HDR2
MTDF2N06HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DSon(
)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
02
0
2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
04
10
0
0.8
01
2
4
0.30
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
10
30
1E–10
1E–09
1E–08
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(A)
VDS ≥ 10 V
TJ = 125°C
25
°C
–55
°C
TJ = 25°C
VGS = 0 V
ID = 1.5 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 1.5 A
5
68
10 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
1.0
50
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
1.2
0.6
1.0
1.4
1.6
2.0
1
3
1
3
4
0.4
0.14
0.18
0.22
0
0.5
0
1E–11
1.0
0.2
3
25
°C
0.8
1.8
TJ = 25°C
VGS = 2.5 V
2.9 V
1
0
5
1E–07
20
40
3.5 V
3.7 V
10 V
4.5 V
34
0.26
0.6
W
3.3 V
6.0 V
相關(guān)PDF資料
PDF描述
MTH13N50 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
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