參數(shù)資料
型號: MTDF2N06HDR2
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 3/10頁
文件大?。?/td> 187K
代理商: MTDF2N06HDR2
MTDF2N06HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (1)(3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(Cpk
≥ 2.0) (1)(3)
(VDS = VGS, ID = 0.25 mAdc)
VGS(th)
1.0
1.6
3.0
Vdc
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (1)(3)
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.75 Adc)
RDS(on)
180
220
260
m
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.0 Adc) (1)
gFS
0.5
2.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 V
Ciss
140
200
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Coss
40
60
Transfer Capacitance
f = 1.0 MHz)
Crss
12
18
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(V
30 Vd
I
1 5 Ad
td(on)
7.5
15
ns
Rise Time
(VDD = 30 Vdc, ID = 1.5 Adc,
VGS =10Vdc
tr
8.0
16
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 ) (1)
td(off)
25
50
Fall Time
G
)
tf
14.5
29
Gate Charge
(See Figure 8)
(V
10 Vd
I
1 5 Ad
QT
18
26
nC
(See Figure 8)
(VGS = 10 Vdc, ID = 1.5 Adc,
(1)
Q1
3.1
( GS
, D
,
VDD = 30 Vdc) (1)
Q2
6.8
Q3
5.0
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.5 Adc, VGS = 0 Vdc) (1)
(IS = 1.5 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.9
0.83
1.5
Vdc
Reverse Recovery Time
(I
1 5 Ad
V
0 Vd
trr
24
ns
(IS = 1.5 Adc, VGS = 0 Vdc,
(1)
ta
18
( S
,
GS
,
dIS/dt = 100 A/s) (1)
tb
6.0
Reverse Recovery Stored Charge
QRR
0.02
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
相關(guān)PDF資料
PDF描述
MTH13N50 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
MTH15N20 15 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
MTH20N15 20 A, 150 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
MTM20N15 20 A, 150 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
MTH20P08 20 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD-H5 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:QuickCarrier? USB-D 零件狀態(tài):Not Recommended For New Designs 功能:收發(fā)器,HSPA,調(diào)制解調(diào)器 調(diào)制或協(xié)議:HSPA+ 頻率:850MHz,900MHz,1.7GHz,1.9GHz,2.1GHz 應(yīng)用:- 接口:USB 靈敏度:- 功率 - 輸出:- 數(shù)據(jù)速率(最大值):21Mbps 特性:USB 供電 電壓 - 電源:5V,USB 標準包裝:10
MTD-H5-2.0 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:- 零件狀態(tài):有效 功能:- 調(diào)制或協(xié)議:HSPA+ 頻率:850MHz,900MHz,1.7GHz,1.8GHz,1.9GHz,2.1GHz 應(yīng)用:通用 接口:USB 靈敏度:- 功率 - 輸出:- 數(shù)據(jù)速率(最大值):21Mbps 特性:- 電壓 - 電源:5V 標準包裝:10
MTDK1S6R 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N-CHANNEL MOSFET (dual transistors)
MTDK3S6R 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:ESD protected N-CHANNEL MOSFET
MTDM8148CCYE2 制造商:Texas Instruments 功能描述:CENTAURUS 3.0W