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參數(shù)資料
| 型號(hào)： | MTD6N20ET5G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | MTD6N20ET5G |
MTD6N20E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
200
689
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.1
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 3.0 Adc)
RDS(on)
0.46
0.700
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125°C)
VDS(on)
2.9
5.0
4.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
1.5
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
342
480
pF
Output Capacitance
Coss
92
130
Reverse Transfer Capacitance
Crss
27
55
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
(VDD = 100 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
RG = 9.1 W)
td(on)
8.8
17.6
ns
Rise Time
tr
29
58
TurnOff Delay Time
td(off)
22
44
Fall Time
tf
20
40.8
Gate Charge
(See Figure 8)
(VDS = 160 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
QT
13.7
21
nC
Q1
2.7
Q2
7.1
Q3
5.9
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.99
0.9
1.2
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
138
ns
ta
93
tb
45
Reverse Recovery Stored Charge
QRR
0.74
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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