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參數(shù)資料
| 型號： | MTD6N20ET5G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MTD6N20ET5G |
Semiconductor Components Industries, LLC, 2010
October, 2010 Rev. 5
1
Publication Order Number:
MTD6N20E/D
MTD6N20E
Power MOSFET
6 A, 200 V, NChannel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a draintosource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
200
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
200
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100°C
Single Pulse (tp ≤ 10 ms)
ID
IDM
6.0
3.8
18
Adc
Apk
Total Power Dissipation
Derate above 25°C
PD
50
0.4
1.75
W
W/°C
W
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc,
IL = 6.0 Apk, L = 3.0 mH, RG = 25 W)
EAS
54
mJ
Thermal Resistance JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJC
RqJA
2.50
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 secs
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6 AMPERES, 200 VOLTS
RDS(on) = 460 mW
NChannel
D
S
G
1
Gate
3
Source
2
Drain
4 Drain
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
6N20E Device Code
Y
= Year
WW
= Work Week
G
= PbFree Package
YWW
6
N20EG
1 2
3
4
YWW
6
N20EG
1
Gate
3
Source
2
Drain
4 Drain
DPAK
CASE 369D
STYLE 2
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
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