參數(shù)資料
型號： MTD6P10ET4
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369C-01, DPAK-3
文件頁數(shù)： 1/7頁
文件大小： 206K
代理商： MTD6P10ET4
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
Publication Order Number:
MTD6P10E/D
MTD6P10E
Preferred Device
Power MOSFET
6 Amps, 100 Volts
PChannel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PbFree Packages are Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
100
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 20
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100°C
Single Pulse (tp ≤ 10 ms)
ID
IDM
6.0
3.9
18
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
PD
50
0.4
1.75
W
W/°C
W
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 6.0 Apk, L = 10 mH, RG = 25 W)
EAS
180
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJC
RqJA
2.50
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq.in. drain pad size.
D
S
G
Device
Package
Shipping
ORDERING INFORMATION
MTD6P10E
DPAK
75 Units/Rail
PChannel
MTD6P10ET4
DPAK
2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
100 V
660 mW
RDS(on) TYP
6.0 A
ID MAX
V(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MTD6P10ET4G
DPAK
(PbFree)
2500 Tape & Reel
MTD6P10EG
DPAK
(PbFree)
75 Units/Rail
MARKING DIAGRAM & PIN ASSIGNMENTS
Y
= Year
WW
= Work Week
T6P10E
= Device Code
G
= PbFree Package
Gate 1
4
Drain
DPAK
CASE 369C
STYLE 2
1 2
3
4
YWW
P10EG
Drain 2
Source 3
T6
相關(guān)PDF資料
PDF描述
MTD9N10ET4 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
MTDF2N06HDR2 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MTH13N50 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
MTH15N20 15 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
MTH20N15 20 A, 150 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD7030 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:PHOTO DIODE
MTD7030A 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:PHOTO DIODE
MTD8000M3B-T 制造商:Marktech Optoelectronics 功能描述:PHOTOTRANS 880NM DOME 3MM
MTD8000M3B-T-DIG 制造商:Marktech Optoelectronics 功能描述:PHOTOTRANS 880NM DOME 3MM
MTD8000N 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:Metal Can Photo Transistor
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*