參數(shù)資料
型號： MT58L512Y36FT-8.5
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 512K X 36 CACHE SRAM, 8.5 ns, PQFP100
封裝： PLASTIC, TQFP-100
文件頁數(shù)： 6/34頁
文件大?。?/td> 537K
代理商： MT58L512Y36FT-8.5
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH SYNCBURST SRAM
18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L1MY18F_16_D.fm – Rev. D, Pub. 2/03
14
2003 Micron Technology, Inc.
Table 11:
TQFP Capacitance
Note 6; notes appear following parameter tables on page 17
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
Control Input Capacitance
TA = 25C; f = 1 MHz;
VDD = 3.3V
CI
4.2
5
pF
Input/Output Capacitance (DQ)
CO
3.5
4
pF
Address Input Capacitance
CA
45
pF
Clock Capacitance
CCK
4.2
5
pF
Table 12:
FBGA Capacitance
Note 6; notes appear following parameter tables on page 17
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
Control Input Capacitance
TA = 25C; f = 1 MHz;
VDD = 3.3V
CI
45
pF
Input/Output Capacitance (DQ)
CO
44.5
pF
Address Input Capacitance
CA
45
pF
Clock Capacitance
CCK
55.5
pF
Table 13:
TQFP Thermal Resistance
Note 6; notes appear following parameter tables on page 17
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS
Junction to Ambient
(Airflow of 1m/s, two-layer board)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
qJA
28.9
C/W
Junction to Case (Top)
qJC
4.2
C/W
Table 14:
FBGA Thermal Resistance
Note 6; notes appear following parameter tables on page 17
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS
Junction to Ambient
(Airflow of 1m/s, two-layer board)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
qJA
32
C/W
Junction to Case (Top)
qJC
1.7
C/W
Junction to Board (Bottom)
qJB
10.4
C/W
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