參數(shù)資料
型號(hào)： MT58L512Y36FT-8.5
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 512K X 36 CACHE SRAM, 8.5 ns, PQFP100
封裝： PLASTIC, TQFP-100
文件頁(yè)數(shù)： 20/34頁(yè)
文件大小： 537K
代理商： MT58L512Y36FT-8.5
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH SYNCBURST SRAM
18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L1MY18F_16_D.fm – Rev. D, Pub. 2/03
27
2003 Micron Technology, Inc.
3.3V TAP AC Test Conditions
I
nput pulse levels............................................ VSS to 3.0V
Input rise and fall times ..............................................1ns
Input timing reference levels.................................... 1.5V
Output reference levels ............................................. 1.5V
Test load termination supply voltage ...................... 1.5V
Figure 18:
3.3V TAP AC Output Load Equivalent
2.5V TAP AC Test Conditions
I
nput pulse levels............................................ VSS to 2.5V
Input rise and fall times ............................................. 1ns
Input timing reference levels.................................. 1.25V
Output reference levels ........................................... 1.25V
Test load termination supply voltage .................... 1.25V
Figure 19:
2.5V TAP AC Output Load Equivalent
NOTE:
1. All voltages referenced to VSS (GND).
2. TAP control balls only. For boundary scan ball specifications, please refer to the I/O DC Electrical Characteristics and
Operation Conditions tables.
.
TDO
1.5V
20pF
Z = 50
O
50
TDO
1.25V
20pF
Z = 50
O
50
Table 20:
3.3V VDD, TAP DC Electrical Characteristics and Operating Conditions
0C
TA +70C; VDD = 3.3V ±0.165V unless otherwise noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
VIH
2.0
VDD + 0.3
V
Input Low (Logic 0) Voltage
VIL
-0.3
0.8
V
Input Leakage Current
0V
VIN VDD
ILI
-10
10
A
Output Leakage Current
Output(s) disabled,
0V
VIN VDD (TDO)
ILO
-10
10
A
Output Low Voltage
IOLC = 100A
VOL1
0.7
V
IOLT = 2mA
VOL2
0.8
V
Output High Voltage
IOHC = -100A
VOH1
2.9
V
1, 2
IOHT = -2mA
VOH2
2.0
V
1, 2
Table 21:
2.5V VDD, TAP DC Electrical Characteristics and Operating Conditions
0C
TA +70C; VDD = 2.5V ±0.125V unless otherwise noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
VIH
1.7
VDD + 0.3
V
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
Input Leakage Current
0V
VIN VDD
ILI
-10
10
A
Output Leakage Current
Output(s) disabled,
0V
VIN VDD (TDO)
ILO
-10
10
A
Output Low Voltage
IOLC = 100A
VOL1
0.2
V
IOLT = 2mA
VOL2
0.7
V
Output High Voltage
IOHC = -100A
VOH1
2.1
V
IOHT = -2mA
VOH2
1.7
V
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