參數(shù)資料
型號： MT58L512Y36FT-8.5
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 512K X 36 CACHE SRAM, 8.5 ns, PQFP100
封裝： PLASTIC, TQFP-100
文件頁數(shù)： 5/34頁
文件大小： 537K
代理商： MT58L512Y36FT-8.5
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH SYNCBURST SRAM
18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L1MY18F_16_D.fm – Rev. D, Pub. 2/03
13
2003 Micron Technology, Inc.
Table 9:
3.3V VDD, 2.5V I/O DC Electrical Characteristics and Operating Conditions
Notes appear following parameter tables on page 17; 0C
TA +70C; VDD = 3.3V ±0.165V and VDDQ = 2.5V ±0.125V unless
otherwise noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
VIHQ1.7
VDDQ + 0.3
V
Inputs
VIH
1.7
VDD + 0.3
V
1, 2
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
Input Leakage Current
0V
VIN VDD
ILI
-1.0
1.0
A
Output Leakage Current
Output(s) disabled,
0V
VIN VDDQ (DQx)
ILO
-1.0
1.0
A
Output High Voltage
IOH = -2.0mA
VOH
1.7
–
V
IOH = -1.0mA
VOH
2.0
–
V
Output Low Voltage
IOL = 2.0mA
VOL
–
0.7
V
IOL = 1.0mA
VOL
–0.4
V
Supply Voltage
VDD
3.135
3.465
V
Isolated Output Buffer Supply
VDDQ
2.375
2.625
V
1, 5
Table 10:
2.5V VDD, 2.5V I/O DC Electrical Characteristics and Operating Conditions
Notes appear following parameter tables on page 17; 0C
TA +70C; VDD and VDDQ = 2.5V ±0.125V unless otherwise
noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
VIHQ1.7
VDDQ + 0.3
V
Inputs
VIH
1.7
VDD + 0.3
V
1, 3
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
Input Leakage Current
0V
VIN VDD
ILI
-1.0
1.0
A
Output Leakage Current
Output(s) disabled,
0V
VIN VDDQ (DQx)
ILO
-1.0
1.0
A
Output High Voltage
IOH = -2.0mA
VOH
1.7
–
V
IOH = -1.0mA
VOH
2.0
–
V
Output Low Voltage
IOL = 2.0mA
VOL
–
0.7
V
IOL = 1.0mA
VOL
–0.4
V
Supply Voltage
VDD
2.375
2.625
V
Isolated Output Buffer Supply
VDDQ
2.375
2.625
V
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