參數(shù)資料
型號： MT48LC4M16A2F4-6IT:G
元件分類： DRAM
英文描述： 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA54
封裝： 8 X 8 MM, VFBGA-54
文件頁數(shù)： 44/72頁
文件大小： 3455K
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM_2.fm - Rev. N 12/08 EN
49
2000 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16 SDRAM
Electrical Specifications
Table 19:
AC Functional Characteristics
Notes 5, 6, 8, 9, 11, 34 apply to entire table; notes appear on pages 50 and 51; VDD, VDDQ = +3.3V ±0.3V
Parameter
Symbol
-6
-7E
-75
Units
Notes
READ/WRITE command to READ/WRITE command
tCCD
111
tCK
CKE to clock disable or power-down entry mode
tCKED
111
tCK
CKE to clock enable or power-down exit setup mode
tPED
1
tCK
DQM to input data delay
tDQD
000
tCK
DQM to data mask during WRITEs
tDQM
000
tCK
DQM to data High-Z during READs
tDQZ
222
tCK
WRITE command to input data delay
tDWD
000
tCK
Data-in to ACTIVE command
tDAL
5
4
5
tCK
Data-in to precharge command
tDPL
222
tCK
Last data-in to burst stop command
tBDL
111
tCK
Last data-in to new READ/WRITE command
tCDL
111
tCK
Last data-in to precharge command
tRDL
222
tCK
LOAD MODE REGISTER command to ACTIVE or REFRESH
command
tMRD
222
tCK
Data-out to High-Z from precharge command
CL = 3
tROH(3)
333
tCK
CL = 2
tROH(2)
–
2
tCK
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參數(shù)描述
MT48LC4M16A2F4-75 制造商:Micron Technology Inc 功能描述:
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