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64MSDRAM_2.fm - Rev. N 12/08 EN
31
2000 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16 SDRAM
Commands
Figure 20:
WRITE-to-WRITE
Note:
DQM is LOW. Each WRITE command may be to any bank.
Data for any WRITE burst may be truncated with a subsequent READ command, and
data for a fixed-length WRITE burst may be immediately followed by a subsequent READ
command. After the READ command is registered, the data inputs will be ignored, and
either the last of a burst of two or the last desired of a longer burst.
Data for a fixed-length WRITE burst may be followed by, or truncated with, a
PRECHARGE command to the same bank (provided that auto precharge was not acti-
vated), and a full-page WRITE burst may be truncated with a PRECHARGE command to
the same bank. The PRECHARGE command should be issued tWR after the clock edge at
which the last desired input data element is registered. The auto precharge mode
requires a tWR of at least one clock plus time, regardless of frequency. In addition, when
truncating a WRITE burst, the DQM signal must be used to mask input data for the clock
edge prior to, and the clock edge coincident with, the PRECHARGE command. An
the last desired of a longer burst. Following the PRECHARGE command, a subsequent
command to the same bank cannot be issued until tRP is met.
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
CLK
DQ
T2
T1
T0
COMMAND
ADDRESS
NOP
WRITE
BANK,
COL n
BANK,
COL b
DIN
n
DIN
n + 1
DIN
b
DON’T CARE
TRANSITIONING DATA