參數(shù)資料
型號: MT47H128M8HQ-3AT
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.4 ns, PBGA60
封裝: 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60
文件頁數(shù): 90/129頁
文件大?。?/td> 9252K
代理商: MT47H128M8HQ-3AT
Figure 31: AC Input Test Signal Waveform Command/Address Balls
tISa
Logic levels
VREF levels
tIHa
tISa
tIHa
tISb
tIHb
tISb
tIHb
CK#
CK
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)min
VIL(AC)min
VSSQ
Vswing
(MAX)
Figure 32: AC Input Test Signal Waveform for Data with DQS, DQS# (Differential)
DQS#
DQS
tDSa
tDHa
tDSa
tDHa
tDSb tDHb
Logic levels
VREF levels
VREF(DC)
VIL(DC)max
VIL(AC)max
VSSQ
VIH(DC)min
VIH(AC)min
VDDQ
Vswing
(MAX)
1Gb: x4, x8, x16 1.55V DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82b91d01
1GbDDR2_1_55V.PDF Rev. A 5/09 EN
63
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
相關(guān)PDF資料
PDF描述
MT47H64M16HR-3IT 64M X 16 DDR DRAM, 0.4 ns, PBGA84
MT48H8M16LFB4-8IT:JTR 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
MT48LC4M32TG-10 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO54
MT48V8M16LFB4-8XT 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
MT48LC4M32LFB5-10ES:G 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT47H128M8HQ-3EAT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HQ-3EIT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HQ-3EL 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HQ-3IT 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM