參數(shù)資料
型號: MT47H128M8HQ-3AT
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.4 ns, PBGA60
封裝: 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60
文件頁數(shù): 82/129頁
文件大?。?/td> 9252K
代理商: MT47H128M8HQ-3AT
Figure 25: Nominal Slew Rate for tIH
Δ
TR
Δ
TF
Nominal
slew rate
DC to VREF
region
tIH
tIS
VSS
CK#
CK
VDDQ
VIH(DC)min
VREF(DC)
VIL(AC)max
VIL(DC)max
VIH(AC)min
DC to VREF
region
Nominal
slew rate
tIH
Figure 26: Tangent Line for tIH
Tangent
line
DC to VREF
region
tIH
tIS
VSS
VDDQ
VIH(DC)min
VREF(DC)
VIL(AC)max
VIL(DC)max
VIH(AC)min
DC to VREF
region
Tangent
line
tIH
CK
CK#
Hold slew rate
falling signal
Δ
TF
Δ
TR
Tangent line (VIH[DC]min - VREF[DC])
Δ
TF
=
Nominal
line
Hold slew rate
rising signal
Tangent line (VREF[DC] - VIL[DC]max)
Δ
TR
=
Nominal
line
1Gb: x4, x8, x16 1.55V DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82b91d01
1GbDDR2_1_55V.PDF Rev. A 5/09 EN
56
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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