參數(shù)資料
型號: MT47H128M8HQ-3AT
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.4 ns, PBGA60
封裝: 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60
文件頁數(shù): 74/129頁
文件大?。?/td> 9252K
代理商: MT47H128M8HQ-3AT
Power and Ground Clamp Characteristics
Power and ground clamps are provided on the following input-only balls: Address balls,
bank address balls, CS#, RAS#, CAS#, WE#, ODT, and CKE.
Table 24: Input Clamp Characteristics
Voltage Across Clamp (V)
Minimum Power Clamp Current
(mA)
Minimum Ground Clamp Current
(mA)
0.0
0.1
0.0
0.2
0.0
0.3
0.0
0.4
0.0
0.5
0.0
0.6
0.0
0.7
0.0
0.8
0.1
0.9
1.0
2.5
1.1
4.7
1.2
6.8
1.3
9.1
1.4
11.0
1.5
13.5
1.6
16.0
1.7
18.2
1.8
21.0
Figure 20: Input Clamp Characteristics
Voltage Across Clamp (V)
Minimum
Clamp
Current
(mA)
25
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
1Gb: x4, x8, x16 1.55V DDR2 SDRAM
Power and Ground Clamp Characteristics
PDF: 09005aef82b91d01
1GbDDR2_1_55V.PDF Rev. A 5/09 EN
49
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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