參數(shù)資料
型號(hào)： MT46V32M8BG-6AT:G
元件分類(lèi)： DRAM
英文描述： 32M X 8 DDR DRAM, 0.7 ns, PBGA60
封裝： (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60
文件頁(yè)數(shù)： 11/93頁(yè)
文件大?。?/td> 3632K
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
19
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – IDD
Table 8:
IDD Specifications and Conditions (x4, x8, x16: -5B, -6, -6T) - Die Revision K Only
VDDQ = +2.6V ±0.1V, VDD = +2.6V ±0.1V (-5B); VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V (-6, -6T);
0°C
≤ T
A ≤ +70°C; Notes: 1–5, 11, 13, 15, 47; Notes appear on pages 35–40; See also Table 9 on page 18
Parameter/Condition
Symbol
-5B
-6/6T
Units
Notes
Operating one-bank precharge current: tRC = tRC (MIN);
tCK = tCK (MIN); DQ, DM, and DQS inputs changing once per clock
cycle; Address and control inputs changing once every two clock cycles
IDD0
100
90
mA
Operating one-bank active-read-precharge current: Burst = 4;
tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA; Address and control
inputs changing once per clock cycle
IDD1
120
115
mA
Precharge power-down standby current: All banks idle; Power-
down mode; tCK = tCK (MIN); CKE = LOW
IDD2P
4
mA
Idle standby current: CS# = HIGH; All banks are idle; tCK = tCK (MIN);
CKE = HIGH; Address and other control inputs changing once per clock
cycle; VIN =VREF for DQ, DQS, and DM
IDD2F
50
mA
Active power-down standby current: One bank active; Power-
down mode; tCK = tCK (MIN); CKE = LOW
IDD3P
35
30
mA
Active standby current: CS# = HIGH; CKE = HIGH; One bank active;
tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM, and DQS inputs changing
twice per clock cycle; Address and other control inputs changing once
per clock cycle
IDD3N
60
55
mA
Operating burst read current: Burst = 2; Continuous burst reads;
One bank active; Address and control inputs changing once per clock
cycle; tCK = tCK (MIN);
IOUT =0mA
IDD4R
180
160
mA
Operating burst write current: Burst = 2; Continuous burst writes;
One bank active; Address and control inputs changing once per clock
cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per
clock cycle
IDD4W
180
160
mA
Auto refresh burst current:
tREFC = tRFC (MIN)
IDD5
160
mA
tREFC = 7.8s
IDD5A
6
mA
tREFC = 1.95s (AT)
IDD5A
9
mA
Self refresh current: CKE
≤ 0.2V
Standard
IDD64
4
mA
Low power (L)
IDD6A
2
mA
Operating bank interleave read current: Four-bank interleaving
READs (burst = 4) with auto precharge; tRC = minimum tRC allowed;
tCK = tCK (MIN); Address and control inputs change only during
ACTIVE, READ, or WRITE commands
IDD7
290
270
mA
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