參數(shù)資料
型號： MT29F4G08FABWGXXXXET
元件分類： PROM
英文描述： 512M X 8 FLASH 2.7V PROM, PDSO48
封裝： TSOP1-48
文件頁數(shù)： 15/57頁
文件大?。?/td> 730K
代理商： MT29F4G08FABWGXXXXET
09005aef818a56a7 pdf/ 09005aef81590bdd source
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__2.fm - Rev. C 5/05 EN
22
2004 Micron Technology, Inc. All rights reserved.
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Command Definitions
Notes: 1. Do not cross die address boundaries when using cache operations. See Tables 4 and 5 for
definition of die address boundaries.
2. Do not cross die address boundaries when using READ for INTERNAL DATA MOVE and
PROGRAM FOR INTERNAL DATA MOVE. See Tables 4 and 5 for definition of die address
boundaries.
3. RANDOM DATA READ command limited to use within a single page.
4. RANDOM DATA INPUT for PROGRAM command limited to use within a single page.
Table 7:
Command Set
Operation
Cycle 1
Cycle 2
Valid During Busy
PAGE READ
00h
30h
No
PAGE READ CACHE MODE START1
31h
—
No
PAGE READ CACHE MODE START LAST1
3Fh
—
No
READ for INTERNAL DATA MOVE2
00h
35h
No
RANDOM DATA READ3
05h
E0h
No
READ ID
90h
—
No
READ STATUS
70h
—
Yes
PROGRAM PAGE
80h
10h
No
PROGRAM PAGE CACHE1
80h
15h
No
PROGRAM for INTERNAL DATA MOVE2
85h
10h
No
RANDOM DATA INPUT for PROGRAM 4
85h
—
No
BLOCK ERASE
60h
D0h
No
RESET
FFh
—
Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT29F4G16ABADAH4 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
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