參數(shù)資料
型號： MT29F4G08FABWGXXXXET
元件分類： PROM
英文描述： 512M X 8 FLASH 2.7V PROM, PDSO48
封裝： TSOP1-48
文件頁數(shù)： 13/57頁
文件大?。?/td> 730K
代理商： MT29F4G08FABWGXXXXET
09005aef818a56a7 pdf/ 09005aef81590bdd source
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__2.fm - Rev. C 5/05 EN
20
2004 Micron Technology, Inc. All rights reserved.
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Bus Operation
Notes: 1. WP# should be biased to CMOS HIGH or LOW for standby.
2. PRE should be tied to VCC or ground. Do not transition PRE during device operations.
The PRE function is not supported on extended-temperature devices.
3. Mode selection settings for this table: H = Logic level HIGH; L = Logic level LOW;
X = VIH or VIL.
Table 6:
Mode Selection
CLE
ALE
CE#
WE#
RE#
WP#1
PRE2
Mode
HL
L
H
X
Read mode
Command input
LH
L
H
X
Address input
HL
L
H
X
Write mode
Command input
LH
L
H
X
Address input
LL
L
H
X
Data input
LL
L
H
X
Sequential read and data output
LL
L
H
X
During read (busy)
X
XXXX
H
X
During program (busy)
X
XXXX
H
X
During erase (busy)
X
XXXX
L
X
Write protect
X
H
X
0V/Vcc
Standby
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT29F4G16ABADAH4 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
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