參數(shù)資料
型號： MT29F4G08FABWGXXXXET
元件分類： PROM
英文描述： 512M X 8 FLASH 2.7V PROM, PDSO48
封裝： TSOP1-48
文件頁數(shù)： 14/57頁
文件大?。?/td> 730K
代理商： MT29F4G08FABWGXXXXET
09005aef818a56a7 pdf/ 09005aef81590bdd source
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2gb_nand_m29b__2.fm - Rev. C 5/05 EN
21
2004 Micron Technology, Inc. All rights reserved.
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Bus Operation
Power-On AUTO-READ
During power-on, with the PRE pin at VCC, 3V VCC devices automatically transfer the
first page of the memory array to the data register without requiring a command or
address-input sequence. As VCC reaches approximately 2.5V, the internal voltage detec-
tor initiates the power-on AUTO-READ function.
R/B# will stay LOW (tRPRE) while the first page of data is copied into the data register.
See Table 18 on page 42 for the tRPRE value. Once the READ is complete and R/B# goes
HIGH, RE# can be pulsed to output the first page of data.
The PRE function is not supported on extended-temperature devices.
Figure 15:
First Page Power-On AUTO-READ (3V VCC only)
Notes: 1. Verified per device characterization; not 100% tested on all devices.
2. The PRE function is not supported on extended-temperature devices.
Figure 16:
AC Waveforms During Power Transitions
≈ 2.5V1
Vcc
CLE
CE#
WE#
ALE
PRE
R/B#
RE#
I/Ox
tRPRE
1st
2nd
3rd
n th
.....
UNDEFINED
WE#
R/B#
WP#
Vcc
10s
HIGH
3V device:
≈ 2.5V
3V device:
≈ 2.5V
UNDEFINED
DON'T CARE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT29F4G16ABADAH4 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
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