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參數(shù)資料
| 型號： | MSM5416263 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 262,144-Word ×16-Bit Multiport DRAM(256k字×16位多端口動態(tài)RAM) |
| 中文描述： | 262,144字× 16位多端口內(nèi)存（256k字× 16位多端口動態(tài)RAM）的 |
| 文件頁數(shù)： | 7/40頁 |
| 文件大?。?/td> | 389K |
| 代理商： | MSM5416263 |
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Semiconductor
MSM5416263
7/40
AC Characteristics (2/3)
Parameter
Symbol
Note
Unit
—
—
—
—
—
—
—
—
t
DS
t
DH
t
RWD
t
AWD
t
CWD
t
DZC
t
DZO
t
OEA
t
OEZ
t
OEH
t
ROH
t
CSR
t
CHR
t
RPC
t
REF
t
WSR
t
RWH
t
FSR
t
RFH
t
FHR
Max.
—
—
—
—
—
—
—
—
Min.
0
12
Max.
—
—
—
—
—
—
—
—
Min.
0
10
Max.
Min.
0
10
-70
-60
-50
t
DHR
t
FSC
t
CFH
t
MS
t
MH
t
THS
t
THH
t
TLS
t
TLH
t
RTH
t
ATH
t
CTH
t
TRP
t
TP
t
RSD
t
ASD
t
CSD
t
TSL
Column Address to First SC Delay Time
CAS
to First SC Delay Time (Read Transfer)
Column Address to
WE
Delay Time
CAS
to
WE
Delay Time
Data to
CAS
Delay Time
Data to
TRG
Delay Time
Access Time from
TRG
Output Buffer Turn-off Delay from
TRG
CAS
Hold Time for
CAS
before
RAS
Cycle
RAS
Precharge to
CAS
Active Time
CAS
Set-up Time for
CAS
before
RAS
Cycle
Data Hold Time
Data Hold Time referenced to
RAS
RAS
to
WE
Delay Time
Data Set-up Time
DSF Set-up Time referenced to
RAS
DSF Hold Time referenced to
RAS
(1)
DSF Hold Time referenced to
RAS
(2)
DSF Set-up Time referenced to
CAS
Write Per Bit Mask Data Hold Time
TRG
High Set-up Time
Write Per Bit Mask Data Set-up Time
TRG
Command Hold Time
RAS
Hold Time referenced to
TRG
Refresh Period
WE
Set-up Time
WE
Hold Time
RAS
to First SC Delay Time (Read Transfer)
TRG
to
RAS
Precharge Time
TRG
Precharge Time
Last SC to
TRG
Lead Time
DSF Hold Time referenced to
CAS
TRG
Low Hold Time referenced to Column Address
TRG
Low Hold Time referenced to
CAS
TRG
High Hold Time
TRG
Low Set-up Time
TRG
Low Hold Time
TRG
Low Hold Time referenced to
RAS
ns
ns
ns
ns
ns
ns
40
0
0
—
35
0
0
—
30
0
0
—
ns
ns
ns
17
—
—
—
—
—
0
15
—
—
—
—
—
0
12
—
—
—
—
—
0
8
10
ns
ns
ns
10
10
0
—
10
10
0
—
8
8
0
—
ns
ns
90
55
80
50
70
45
ms
ns
ns
ns
ns
ns
8
8
8
0
0
0
ns
55
50
40
20
18
15
10
15
10
10
10
0
10
55
10
0
10
50
10
0
10
40
0
0
0
10
0
10
0
10
0
10
60
25
20
10
0
10
0
10
0
10
50
20
15
10
0
10
0
10
0
10
40
20
15
60
20
70
45
20
5
50
20
60
40
20
5
40
15
50
35
20
5
13
13
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10k
10k
—
—
—
—
—
—
—
—
10k
10k
—
—
—
—
—
—
—
—
10k
10k
—
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
12
12
13
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSM548128BL | 131,072-Word ×8-Bit High-Speed PSRAM(128k字×8位高速偽靜態(tài)RAM) |
| MSM548332 | 278,400-Word×12-Bit Field Memory(278,400字×12位場存儲器) |
| MSM54V32126A | 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM54V32126A-45GS-K | 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM54V32126A-45TS-K | 131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSM5416263-60G3-K | 制造商:ROHM Semiconductor 功能描述: |
| MSM5416263-60GS-K | 制造商:ROHM Semiconductor 功能描述: |
| MSM5416273-50G3-K | 制造商:ROHM Semiconductor 功能描述:DUE TO FLOOD DAMAGE TO TESTERS |
| MSM5416273-50GS-K | 制造商:ROHM Semiconductor 功能描述: 制造商:OK International 功能描述:256K X 16 VIDEO DRAM, 50 ns, PDSO64 |
| MSM541627360GSK | 制造商:OK International 功能描述: |
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