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參數資料
| 型號： | MSM5416263 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 262,144-Word ×16-Bit Multiport DRAM(256k字×16位多端口動態(tài)RAM) |
| 中文描述： | 262,144字× 16位多端口內存（256k字× 16位多端口動態(tài)RAM）的 |
| 文件頁數： | 33/40頁 |
| 文件大小： | 389K |
| 代理商： | MSM5416263 |
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Semiconductor
MSM5416263
33/40
Block Write:
RAS
falling edge ---
CAS
=
TRG
= "H", DSF = "L"
CAS
falling edge --- DSF = "H"
Block write allows for the data in the color register to be written into 4 consecutive column
address locations, starting from a selected column address in a selected row.
The block write operation can be selectively controlled on an I/O basis, and a column mask
capability is also available. This function is implemented as 4 columns
￥
4 IOs repeated in four
quadrants. During a block write cycle, the 2 least significant column address locations (A0C,
A1C) are internally controlled, and only the 7 most significant column addresses (A2C - A8C) are
latched at the falling edge of
CAS
.
1) No mask block write:
WEL
and
WEU
"high" at the falling edge of
RAS
The data on 16 DQ pins is cleared by the data of the color register.
2) Masked block write:
WEL
or
WEU
"low" at the falling edge of
RAS
The mask data is the same as that of a RAM write cycle. (new mask and persistent mask)
*
*
*
*
I/O15
*
*
*
*
I/O14
*
*
*
*
I/O13
*
*
*
*
I/O12
*
*
*
*
I/O11
*
*
1
1
I/O10
*
*
1
1
I/O9
*
*
*
*
I/O8
*
*
*
*
I/O7
1
1
1
1
I/O6
*
*
*
*
I/O5
1
1
1
1
I/O4
0
*
*
0
I/O3
0
*
*
0
I/O2
1
*
*
1
I/O1
1
*
*
1
I/O0
4 Column
￥
4 I/O (3)
4 Column
￥
4 I/O (2)
4 Column
￥
4 I/O (1)
4 Column
￥
4 I/O (4)
Note : Location "*" can not be loaded.
Color Register
I/O Mask
Column Mask
1100 1110 0111 0011
1111 1010 0110 1011
1001 1111 0011 0000
(1) (2) (3) (4)
Bit 0
Bit 15
Example of Block Write
C
C
C
C
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相關代理商/技術參數 |
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|---|---|
| MSM5416263-60G3-K | 制造商:ROHM Semiconductor 功能描述: |
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