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型號(hào)：	MQ80C52CXXX-36SBR
廠商：	TEMIC SEMICONDUCTORS
元件分類：	微控制器/微處理器
英文描述：	8-BIT, MROM, 36 MHz, MICROCONTROLLER, CQFP44
文件頁(yè)數(shù)：	507/1447頁(yè)
文件大?。?/td>	3788K
代理商：	MQ80C52CXXX-36SBR

6437E–ATARM–23-Apr-13

EBI Chip Select Assignment Register

EBI_CS1A: EBI Chip Select 1 Assignment

0 = EBI Chip Select 1 is assigned to the Static Memory Controller.

1 = EBI Chip Select 1 is assigned to the SDRAM Controller.

EBI_CS3A: EBI Chip Select 3 Assignment

0 = EBI Chip Select 3 is only assigned to the Static Memory Controller and EBI_NCS3 behaves as defined by the SMC.

1 = EBI Chip Select 3 is assigned to the Static Memory Controller and the SmartMedia Logic is activated.

EBI_CS4A: EBI Chip Select 4 Assignment

0 = EBI Chip Select 4 is only assigned to the Static Memory Controller and EBI_NCS4 behaves as defined by the SMC.

1 = EBI Chip Select 4 is assigned to the Static Memory Controller and the Compact Flash Logic Slot 0 is activated.

EBI_CS5A: EBI Chip Select 5 Assignment

0 = EBI Chip Select 5 is only assigned to the Static Memory Controller and EBI_NCS5 behaves as defined by the SMC.

1 = EBI Chip Select 5 is assigned to the Static Memory Controller and the Compact Flash Logic Slot 1 is activated.

EBI_DBPUC: EBI Data Bus Pull-Up Configuration

0 = EBI D0 - D15 Data Bus bits are internally pulled-up to the VDDIOM1 power supply.

1 = EBI D0 - D15 Data Bus bits are not internally pulled-up.

EBI_DRIVE: EBI I/O Drive Configuration

This allows to avoid overshoots and give the best performances according to the bus load and external memories.

DDR_DRIVE: DDR2 dedicated port I/O slew rate selection

This allows to avoid overshoots and give the best performances according to the bus load and external memories.

0 = Low Drive, optimized for load capacitance < 30 pF.

1 = High Drive, optimized for load capacitance < 55 pF.

Note: This concerns only stand-alone DDR controller.

Drive configuration

Conditions

optimized for 1.8V powered memories with Low Drive

Maximum load capacitance < 30 pF

optimized for 3.3V powered memories with Low Drive

Maximum load capacitance < 30 pF

optimized for 1.8V powered memories with High Drive

Maximum load capacitance < 55 pF

optimized for 3.3V powered memories with High Drive

Maximum load capacitance < 55 pF

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MQ82380-20	制造商:Rochester Electronics LLC 功能描述:- Bulk
MQ82380-20/R	制造商:Rochester Electronics LLC 功能描述:
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