參數(shù)資料
型號: MPC5554AVR132R2
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: MICROCONTROLLER, PBGA416
封裝: 27 X 27 MM, 1 MM PITCH, LEAD FREE, PLASTIC, MS-034AAL-1, TEPBGA-416
文件頁數(shù): 16/58頁
文件大?。?/td> 1452K
代理商: MPC5554AVR132R2
Electrical Characteristics
MPC5554 Microcontroller Data Sheet, Rev. 2.0
Freescale Semiconductor
23
3.11
H7Fa Flash Memory Electrical Characteristics
Spec
Table 14. Flash Program and Erase Specifications (TA = TL to TH)
Spec
Flash Program Characteristic
Symbol
Min
Typical1
1 Typical program and erase times assume nominal supply values and operation at 25 oC.
Initial
Max2
2 Initial factory condition:
≤ 100 program/erase cycles, 25 oC, using a typical supply voltage measured at a minimum system
frequency of 80 MHz.
Max3
3 The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized
but not guaranteed.
Unit
3
Doubleword (64 bits) program time4
4 Actual hardware programming times. This does not include software overhead.
Tdwprogram
—10
500
μs
4
Page program time4
Tpprogram
—22
445
5 Page size is 256 bits (8 words).
500
μs
7
16 KB block pre-program and erase time
T16kpperase
265
400
5000
ms
9
48 KB block pre-program and erase time
T48kpperase
345
400
5000
ms
10
64 KB block pre-program and erase time
T64kpperase
415
500
5000
ms
8
128 KB block pre-program and erase time
T128kpperase
500
1250
7500
ms
11
Minimum operating frequency for program and erase
operations6
6 The read frequency of the flash can range up to the maximum operating frequency of the device. There is no minimum read
frequency condition.
—25
MHz
Table 15. Flash EEPROM Module Life (TA = TL to TH)
Spec
Characteristic
Symbol
Min.
Typical1
1 Typical endurance is evaluated at 25o C. Product qualification is performed to the minimum specification. For additional
information on the Freescale definition of typical endurance, refer to engineering bulletin EB619 Typical Endurance for
Nonvolatile Memory.
Unit
1a
Number of program/erase cycles per block for 16 KB, 48 KB, and
64 KB blocks over the operating temperature range (TJ)
P/E
100,000
cycles
1b
Number of program/erase cycles per block for 128 KB blocks over the
operating temperature range (TJ)
P/E
1000
100,000
cycles
2
Data retention
Blocks with 0–1,000 P/E cycles
Blocks with 1,001–100,000 P/E cycles
Retention
20
5
years
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