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參數(shù)資料
| 型號： | MMDF1N05E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 1 Amp, 50 Volts N-Channel(1A，50V，N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 功率MOSFET 1安培，50伏特N溝道（第1A的50V，?溝道增強(qiáng)型功率馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MMDF1N05E |
MMDF1N05E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250
μ
A)
V(BR)DSS
50
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
IDSS
–
–
250
μ
Adc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
–
–
100
nAdc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
VGS(th)
1.0
–
3.0
Vdc
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.6 Adc)
RDS(on)
RDS(on)
–
–
–
–
0.30
0.50
Ohms
Forward Transconductance (VDS = 15 V, ID = 1.5 A)
gFS
–
1.5
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
25 V V
Ciss
Coss
Crss
–
330
–
pF
Output Capacitance
–
160
–
Reverse Transfer Capacitance
–
50
–
SWITCHING CHARACTERISTICS
(Note 3.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
–
–
20
ns
Rise Time
(VDD = 10 V, ID = 1.5 A, RL = 10
(VDD 10 V, ID 1.5 A, RL 10
,
VG = 10 V, RG = 50
)
–
–
30
Turn–Off Delay Time
–
–
40
Fall Time
–
–
25
Total Gate Charge
(VDS = 10 V, ID = 1.5 A,
VGS = 10 V)
10 V I
1 5 A
–
12.5
–
nC
Gate–Source Charge
–
1.9
–
Gate–Drain Charge
–
3.0
–
SOURCE–DRAIN DIODE CHARACTERISTICS
(TC = 25
°
C)
Forward Voltage (Note 2.)
(IS = 1.5 A, VGS = 0 V)
(IS 1.5 A, VGS 0 V)
(dIS/dt = 100 A/
μ
s)
VSD
trr
–
–
1.6
V
Reverse Recovery Time
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
3. Switching characteristics are independent of operating junction temperature.
–
45
–
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MMDF1N05ER2 | 功能描述:MOSFET 50V 1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF1N05ER2G | 功能描述:MOSFET NFET SO8D 50V 200mA 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
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