參數(shù)資料
型號： MMDF1N05E
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 1 Amp, 50 Volts N-Channel(1A，50V，N溝道增強型功率MOS場效應(yīng)管)
中文描述： 功率MOSFET 1安培，50伏特N溝道（第1A的50V，?溝道增強型功率馬鞍山場效應(yīng)管）
文件頁數(shù)： 1/8頁
文件大?。?/td> 72K
代理商： MMDF1N05E
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 6
1
Publication Order Number:
MMDF1N05E/D
MMDF1N05E
Power MOSFET
1 Amp, 50 Volts
N–Channel SO–8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a low reverse recovery time. MiniMOS
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc–dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
VGS
ID
IDM
50
Volts
Gate–to–Source Voltage – Continuous
±
20
Volts
Drain Current – Continuous
Drain Current
– Pulsed
2.0
10
Amps
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 25 V, VGS = 10 V, IL = 2 Apk)
EAS
300
mJ
Operating and Storage Temperature Range
TJ, Tstg
–55 to
150
°
C
Total Power Dissipation @ TA = 25
°
C
Thermal Resistance – Junction to Ambient
(Note 1.)
PD
R
θ
JA
2.0
Watts
62.5
°
C/W
Maximum Temperature for Soldering,
Time in Solder Bath
TL
260
10
°
C
Sec
1. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with
one die operating, 10 sec. max.
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
1
8
1 AMPERE
50 VOLTS
RDS(on) = 300 m
Device
Package
Shipping
ORDERING INFORMATION
MMDF1N05ER2
SO–8
2500 Tape & Reel
SO–8, Dual
CASE 751
STYLE 11
http://onsemi.com
N–Channel
LYWW
MARKING
DIAGRAM
D
S
G
F1N05
L
Y
WW
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDF1N05ER2 功能描述:MOSFET 50V 1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF1N05ER2G 功能描述:MOSFET NFET SO8D 50V 200mA 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF1N05ER2G 制造商:ON Semiconductor 功能描述:MOSFET
MMDF2C01HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
MMDF2C02E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
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