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參數(shù)資料
| 型號： | MMBTA20LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MMBTA20LT1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 2
1
Publication Order Number:
MMBTA20LT1/D
MMBTA20LT1
General Purpose Amplifier
NPN Silicon
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
40
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current Continuous
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation Alumina
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 6
Device
Package
Shipping
ORDERING INFORMATION
MMBTA20LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA20LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1C M
G
1C = Specific Device Code
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| MMBTA20LT3 | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA28-TP | 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA28P | 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA28 | 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA42-13 | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA28 | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA28 | 制造商:Fairchild Semiconductor Corporation 功能描述:SSOT-3 NPN:ROHS COMPLIANT |
| MMBTA28_Q | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA28-7 | 功能描述:達林頓晶體管 80V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA28-7-F | 功能描述:達林頓晶體管 80V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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