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參數(shù)資料
| 型號： | MMBTA28P |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MMBTA28P |
MMBTA28
NPN Surface Mount
Darlington Transistor
SOT-23
Suggested Solder
Pad Layout
Features
Ideal for Medium Power Amplification and Switching
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.118
2.80
3.00
B
.090
.098
2.30
2.50
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.043
.90
1.10
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
80.0
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100
Adc, I
E=0)
80.0
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100
Adc, I
C=0)
12.0
Vdc
ICBO
Collector Cutoff Current
(VCB=60Vdc, IE=0)
100
nA
IEBO
Emitter Cutoff Current
(VEB=10Vdc, IC=0)
100
nA
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=10mAdc, VCE=5Vdc)
(IC=100mAdc, VCE=5Vdc)
10,000
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=100uAdc)
1.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=100mAdc,VCE=5.0v)
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=100MHz)
125
MHz
Ccb
Collector-Emitter Capacitance
(VCB=10Vdec, IE=0, f=1.0MHz)
8.0
pF
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
A
B
C
D
E
F
G
H
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,
TA = 25°C
PD
300
mW
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
Revision: 2
2006/05/13
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
High Current Gain
k
TM
Micro Commercial Components
E
B
C
Εpitaxial Planar Die Construction
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 4
Marking: 3SS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| MMBTA3904,215 | 制造商:NXP Semiconductors 功能描述: |
| MMBTA42 | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA42 T/R | 功能描述:開關晶體管 - 偏壓電阻器 TRANS SW TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMBTA42,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA42 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23 |
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