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參數(shù)資料
| 型號： | MMBTA42-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 62K |
| 代理商： | MMBTA42-13 |
DS30062 Rev. 6 - 2
1 of 3
MMBTA42
www.diodes.com
Diodes Incorporated
MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBTA92)
Ideal for Medium Power Amplification and
Switching
Also Available in Lead Free Version
Characteristic
Symbol
MMBTA42
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current (Note 1) (Note 3)
IC
500
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
B
H
G
D
K
E
Mechanical Data
Case: SOT-23, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 5, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K3M
Ordering & Date Code Information: See Page 2
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (RqJA), power dissipation rating (Pd) and power derating curve (figure 1).
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
300
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
300
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 100
mA, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 200V, IE = 0
Collector Cutoff Current
IEBO
100
nA
VCE = 6.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
25
40
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 20mA, IB = 2.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
0.9
V
IC = 20mA, IB = 2.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ccb
3.0
pF
VCB = 20V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
50
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Features
SPICE MODEL: MMBTA42
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