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參數(shù)資料
| 型號(hào)： | MJD112-001G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 101K |
| 代理商： | MJD112-001G |
MJD112 (NPN) MJD117 (PNP)
http://onsemi.com
4
I C
,COLLECT
OR
CURRENT
(AMP)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
2
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
520
3
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
100
ms
1ms
dc
0.1
1
3
7
10
730
25
T, TEMPERATURE (
°C)
0
50
75
100
125
15
20
15
10
5
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
2.5
0
2
1.5
1
0.5
TA TC
TA
SURFACE
MOUNT
TC
0.7
5ms
50
70
200
500
ms
ACTIVEREGION SAFEOPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) < 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
C,
CAP
ACIT
ANCE
(pF)
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25°C
200
10
50
70
100
0.1
2
6
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD112-BP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD112-I | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-T1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-TP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD1121 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
| MJD112-1G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD112L | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
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