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參數(shù)資料
| 型號： | MJD112-001G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 101K |
| 代理商： | MJD112-001G |
MJD112 (NPN) MJD117 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
100
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
20
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
20
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
2
mAdc
CollectorCutoff Current (VCB = 80 Vdc, IE = 0)
ICBO
10
mAdc
EmitterCutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
2
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
500
1000
200
12,000
CollectorEmitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
2
3
Vdc
BaseEmitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
4
Vdc
BaseEmitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
25
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD117
MJD112
Cob
200
100
pF
2. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD112-BP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD112-I | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-T1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-TP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD1121 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
| MJD112-1G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD112L | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
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