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| 型號(hào)： | MJD112-001G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, CASE 369D-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 101K |
| 代理商： | MJD112-001G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 6
1
Publication Order Number:
MJD112/D
MJD112 (NPN)
MJD117 (PNP)
Preferred Device
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
VCEO
100
Vdc
CollectorBase Voltage
VCB
100
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current
Continuous
Peak
IC
2
4
Adc
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
20
0.16
W
W/
°C
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25
°C
PD
1.75
0.014
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
6.25
°C/W
Thermal Resistance, JunctiontoAmbient
(Note 1)
RqJA
71.4
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
DPAK3
CASE 369D
DPAK
CASE 369C
MARKING
DIAGRAMS
Preferred devices are recommended choices for future use
and best overall value.
Y
= Year
WW
= Work Week
x
= 2 or 7
G
= PbFree Package
1 2
3
4
YWW
J11xG
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
1
2
3
4
YWW
J11xG
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD112-BP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD112-I | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-T1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-TP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD1121 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
| MJD112-1G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD112L | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
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