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參數(shù)資料
| 型號(hào)： | MJD112-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | MJD112-BP |
Silicon
NPN epitaxial planer
Transistors
Features
MaximumRatings@25OCUnlessOtherwiseSpecified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
100
V
VCBO
Collector-Base Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
PC
Collector Dissipation
1.0
W
TJ
Operating Junction Temperature
150
TSTG
Storage Temperature
-55 to +150
ElectricalCharacteristics@25OCUnlessOtherwiseSpecified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=30mAdc, IB=0)
100
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1mAdc, IE=0)
100
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=5mAdc, IC=0)
5
---
Vdc
ICBO
Collector Cutoff Current
(VCB=100Vdc, IE=0)
---
20
nAdc
IEBO
Emitter Cutoff Current
(VEB=5Vdc, IC=0)
---
2
mAdc
hFE
DC Current Gain
(IC=500mAdc, VCE=3Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=2Adc, IB=8mAdc)
---
2
Vdc
Cob
Output Capacitance
(VCB=10Vdc, f=0.1MHz, IE=0)
---
100
pF
Revision: 1
2008/09/10
omponents
20736 Marilla Street Chatsworth
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Micro Commercial Components
www.mccsemi.com
1 of 3
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
0.235
0.245
5.97
6.22
B
0.205
0.215
5.21
5.46
C
0.086
0.094
2.19
2.38
D
0.025
0.035
0.64
0.89
E
0.035
0.045
0.99
1.14
F
0.250
0.265
6.35
6.73
G
0.090
2.28
J
0.018
0.023
0.48
0.58
K
0.020
---
0.51
---
S
0.370
0.410
9.40
10.42
V
0.035
0.050
0.88
1.27
A
S
V
B
D
G
C
E
J
K
1
2
3
F
MJD112
ICEO
Collector emitter cutoff Current
(VCE=50Vdc, IE=0)
---
20
nAdc
(IC=2Adc, VCE=3Vdc)
(IC=4Adc, IB=40mAdc)
---
3
Vdc
---
VBE
Base-Emitter Saturation Voltage
(IC=2Adc, VCE=3Vdc )
---
2.8
Vdc
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
500
---
1000
---
12000
(IC=4Adc, VCE=3Vdc)
200
---
Transition frequency
(VCE=10Vdc, f=1MHz, IC=0.75A)
25
MHz
DPACK
High DC Current Gain
Lead Free Finish/RoHS Compliant("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material:Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Built-in a damper diode at E-C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD112-I | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-T1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-TP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD112T4 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD112G | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD112L | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD112RL | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112RLG | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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