C, the internal [dynamic component], is classic C*V
參數(shù)資料
型號(hào)： MC56F8123VFBE
廠商： Freescale Semiconductor
文件頁數(shù)： 36/140頁
文件大?。?/td> 0K
描述： IC DSP 16BIT 40MHZ 64-LQFP
標(biāo)準(zhǔn)包裝： 160
系列： 56F8xxx
核心處理器： 56800E
芯體尺寸： 16-位
速度： 40MHz
連通性： SCI，SPI
外圍設(shè)備： POR，WDT
輸入/輸出數(shù)： 27
程序存儲(chǔ)器容量： 32KB（16K x 16）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 8K x 8
電壓 - 電源 (Vcc/Vdd)： 2.25 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 8x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 105°C
封裝/外殼： 64-LQFP
包裝： 托盤
產(chǎn)品目錄頁面： 734 (CN2011-ZH PDF)
56F8323 Technical Data, Rev. 17
130
Freescale Semiconductor
Preliminary
C, the internal [dynamic component], is classic C*V2*F CMOS power dissipation corresponding to the
56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive loading
on the external pins of the chip. This is also commonly described as C*V2*F, although simulations on two
of the IO cell types used on the 56800E reveal that the power-versus-load curve does have a non-zero
Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and
frequency at which the outputs change. Table 10-25 provides coefficients for calculating power dissipated
in the IO cells as a function of capacitive load. In these cases:
TotalPower =
Σ((Intercept + Slope*Cload)*frequency/10MHz)
where:
Summation is performed over all output pins with capacitive loads
TotalPower is expressed in mW
Cload is expressed in pF
Because of the low duty cycle on most device pins, power dissipation due to capacitive loads was found
to be fairly low when averaged over a period of time.
E, the external [static component], reflects the effects of placing resistive loads on the outputs of the
device. Sum the total of all V2/R or IV to arrive at the resistive load contribution to power. Assume V =
0.5 for the purposes of these rough calculations. For instance, if there is a total of eight PWM outputs
driving 10mA into LEDs, then P = 8*.5*.01 = 40mW.
In previous discussions, power consumption due to parasitics associated with pure input pins is ignored,
as it is assumed to be negligible.
Table 10-25 IO Loading Coefficients at 10MHz
Intercept
Slope
8mA CMOS 3-State Output Pad with Input-Enabled Pull-Up
1.3
0.11mW / pF
4mA CMOS 3-State Output Pad with Input-Enabled Pull-Up
1.15mW
0.11mW / pF
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