參數(shù)資料
型號(hào): MBM29LV008T-X
廠商: Fujitsu Limited
英文描述: CMOS 8M (1M ×8) Flash Memory(CMOS 8M (1M ×8)位3V單電源 閃速存儲(chǔ)器)
中文描述: 800萬(wàn)的CMOS(100萬(wàn)× 8)快閃記憶體(800萬(wàn)的CMOS(100萬(wàn)× 8)位3V的單電源閃速存儲(chǔ)器)
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代理商: MBM29LV008T-X
41
MBM29LV008T-X/MBM29LV008B-X
Fail
DQ
6
= Toggle
Yes
No
DQ
6
= Toggle
DQ
5
= 1
Pass
Yes
No
No
Yes
Start
Read Byte
(DQ
0
to DQ
7
)
Addr. = VA
Read Byte
(DQ
0
to DQ
7
)
Addr. = VA
Figure 20 Toggle Bit Algorithm
Note:
DQ
6
is rechecked even if DQ
5
= “1” because DQ
6
may stop toggling at the same time as DQ
5
changing to “1”.
VA = Address for programming
= Any of the sector addresses
within the sector being erased
during sector erase or multiple
sector erase operation
= XXXXH during sector erase or
multiple sector erases
= Any of the sector addresses
within the sector not being
protected during chip erase
operation
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MBM29LV016B 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT
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MBM29LV016B-12PTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT
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