參數(shù)資料
型號: MBM29LV008T-X
廠商: Fujitsu Limited
英文描述: CMOS 8M (1M ×8) Flash Memory(CMOS 8M (1M ×8)位3V單電源 閃速存儲器)
中文描述: 800萬的CMOS(100萬× 8)快閃記憶體(800萬的CMOS(100萬× 8)位3V的單電源閃速存儲器)
文件頁數(shù): 32/47頁
文件大?。?/td> 434K
代理商: MBM29LV008T-X
32
MBM29LV008T-X/MBM29LV008B-X
t
WS
t
GHEL
t
WH
t
WHWH1
t
WC
WE
OE
Addresses
Data
t
CP
t
CPH
t
AH
t
DS
t
DH
DQ
7
PD
A0H
D
OUT
CE
5555H
PA
PA
Data Polling
3rd Bus Cycle
t
AS
Figure 8 Alternate CE Controlled Program Operation Timings
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
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MBM29LV008BA 8M (1M X 8) BIT
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參數(shù)描述
MBM29LV016B 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT
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MBM29LV016B-12PTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT
MBM29LV016B-12PTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT
MBM29LV016B-80 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT