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參數(shù)資料
| 型號： | MBM29LV008T-X |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 8M (1M ×8) Flash Memory(CMOS 8M (1M ×8)位3V單電源 閃速存儲器) |
| 中文描述： | 800萬的CMOS（100萬× 8）快閃記憶體（800萬的CMOS（100萬× 8）位3V的單電源閃速存儲器） |
| 文件頁數(shù)： | 20/47頁 |
| 文件大?。?/td> | 434K |
| 代理商： | MBM29LV008T-X |
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MBM29LV008T-X/MBM29LV008B-X
Data Protection
The MBM29LV008T-X/008B-X are designed to offer protection against accidental erasure or programming
caused by spurious system level signals that may exist during power transitions. During power up the device
automatically resets the internal state machine in the read mode. Also, with its control register architecture,
alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command
sequences.
The device also incorporates several features to prevent inadvertent write cycles resulting form V
CC
power-up
and power-down transitions or system noise.
Low V
CC
Write Inhibit
To avoid initiation of a write cycle during V
CC
power-up and power-down, a write cycle is locked out for V
CC
less
than 2.5 V (typically 2.4 V). If V
CC
< V
LKO
, the command register is disabled and all internal program/erase circuits
are disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until
the V
CC
level is greater than V
LKO
. It is the users responsibility to ensure that the control pins are logically correct
to prevent unintentional writes when V
CC
is above 2.5 V.
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = V
IL
, CE = V
IH
, or WE = V
IH
. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE = CE =V
IL
and OE = V
IH
will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the read mode on power-up.
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29LV008BA | 8M (1M X 8) BIT |
| MBM29LV008BA-90PTR | 8M (1M X 8) BIT |
| MBM29LV008TA-12 | 8M (1M X 8) BIT |
| MBM29LV008TA-12PTN | 8M (1M X 8) BIT |
| MBM29LV008TA-12PTR | 8M (1M X 8) BIT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV016B | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT |
| MBM29LV016B-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT |
| MBM29LV016B-12PTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT |
| MBM29LV016B-12PTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT |
| MBM29LV016B-80 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8) BIT |
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