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參數(shù)資料
| 型號： | MB814100A-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| 中文描述： | 的CMOS 4米× 1位快速頁面模式的DRAM的CMOS（4分× 1位快速頁面存取模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 8/25頁 |
| 文件大?。?/td> | 309K |
| 代理商： | MB814100A-60 |
8
MB814100A-60/MB814100A-70/MB814100A-80
I
AC CHARACTERISTICS (Continued)
(At recommended operating conditions unless otherwise noted.) Notes 3, 4, 5
No.
Parameter
Notes Symbol
MB814100A-60 MB814100A-70 MB814100A-80
Unit
Min.
Max.
Min.
Max.
Min.
Max.
28
Read Command Hold Time
Referenced to CAS
t
RCH
0
—
0
—
0
—
ns
29
Write Command Set Up
Time
t
WCS
0
—
0
—
0
—
ns
30 Write Command Hold Time
t
WCH
10
—
10
—
12
—
ns
31 WE Pulse Width
t
WP
10
—
10
—
12
—
ns
32 Write Command to RAS Lead Time
t
RWL
15
—
20
—
20
—
ns
33 Write Command to CAS Lead Time
t
CWL
15
—
18
—
20
—
ns
34 DIN set Up Time
t
DS
0
—
0
—
0
—
ns
35 DIN Hold Time
t
DH
10
—
10
—
12
—
ns
36 RAS to WE Delay Time
t
RWD
60
—
70
—
80
—
ns
37 CAS to WE Delay Time
t
CWD
15
—
20
—
20
—
ns
38
Column Address to WE
Delay Time
t
AWD
30
—
35
—
40
—
ns
39
RAS Precharge time to CAS Active
Time (Refresh cycles)
t
RPC
0
—
0
—
0
—
ns
40
CAS Set Up Time for CAS-before-
RAS Refresh
t
CSR
0
—
0
—
0
—
ns
41
CAS Hold Time for CAS-before-
RAS Refresh
t
CHR
10
—
10
—
12
—
ns
42 WE Set Up Time from RAS
t
WSR
0
—
0
—
0
—
ns
43 WE Hold Time from RAS
t
WHR
10
—
10
—
10
—
ns
51
Fast Page Mode Read/Write
Cycle Time
t
PC
40
—
45
—
45
—
ns
52
Fast Page Mode Read-Modify-
Write Cycle Time
t
PRWC
60
—
68
—
70
—
ns
53
Access Time from CAS
Precharge
t
CPA
—
35
—
40
—
40
ns
54
Fast Page Mode CAS Precharge
Time
t
CP
10
—
10
—
10
—
ns
55 Fast Page Mode RAS Pulse width
t
RASP
—
200000
—
200000
—
200000
ns
56
Fast Page Mode RAS Hold Time
from CAS Precharge
t
RHCP
35
—
40
—
40
—
ns
57
Fast Page Mode CAS Precharge to
WE Delay Time
t
CPWD
35
—
40
—
40
—
ns
14
15
15
15
15
18
18
9,16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB814100A-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100A-80 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100C-60 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100C-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速頁面存取模式動態(tài)RAM) |
| MB814100D-60 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MB81416-10 | 制造商:Fuji Electric 功能描述:81416-10/MB |
| MB81416-12 | 制造商:Freescale Semiconductor 功能描述:81416-12 |
| MB814400C-70PJN | 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ |
| MB814405D-60PJN | 制造商:FUJITSU Component Ltd 功能描述: |
| MB8146112 | 制造商:FUJITSU 功能描述:* |
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