參數(shù)資料
型號(hào): MB814100A-60
廠商: Fujitsu Limited
英文描述: CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 4米× 1位快速頁(yè)面模式的DRAM的CMOS(4分× 1位快速頁(yè)面存取模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 13/25頁(yè)
文件大小: 309K
代理商: MB814100A-60
13
MB814100A-60/MB814100A-70/MB814100A-80
RAS
CAS
A
0
to A
10
WE
D
OUT
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
D
IN
V
IH
V
IL
DESCRIPTION
The read-modify-write cycle is executed by changing WE from “H” to “L” after the data appears on the D
OUT
pin.
After the current data is read out, modified data can be rewritten into the same address quickly.
t
RAH
t
ASC
Fig. 7 - READ WRITE/READ-MODIFY-WRITE CYCLE
t
ON
t
RAL
t
RWC
t
RAS
t
CSH
t
RP
t
RCD
t
CRP
t
RSH
t
CAS
t
RAD
t
ASR
t
CWL
t
AWD
t
CAH
t
RWL
t
RCS
t
WP
t
DS
t
DH
t
RWD
t
CWD
t
AA
t
RAC
t
CAC
t
OH
t
OFF
ROW
ADD.
COLUMN ADDRESS
HIGH-Z
VALID
DATA
VALID DATA
“H” or “L”
Invalid Data
相關(guān)PDF資料
PDF描述
MB814100A-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814100A-80 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814100C-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814100C-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速頁(yè)面存取模式動(dòng)態(tài)RAM)
MB814100D-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁(yè)面存取模式動(dòng)態(tài)RAM)
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