- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377884 > MB814100A-60 (Fujitsu Limited) CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | MB814100A-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| 中文描述： | 的CMOS 4米× 1位快速頁面模式的DRAM的CMOS（4分× 1位快速頁面存取模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 17/25頁 |
| 文件大?。?/td> | 309K |
| 代理商： | MB814100A-60 |
17
MB814100A-60/MB814100A-70/MB814100A-80
DESCRIPTION
The refresh of DRAM is executed by normal read, write or read-modify-write cycle, i.e., the cells on the one row line are also refreshed
by executing one of three cycles. 1024 row address must be refreshed every 16.4 ms period. During the refresh cycle, the cell data
connected to the selected row are sent to sense amplifier and re-written to the cell. The MB814100A has three types of refresh modes,
RAS-only refresh, CAS-before-RAS refresh, and Hidden refresh.
The RAS only refresh is executed by keeping RAS “L” and CAS “H” throughout the cycle. The row address to be refreshed is latched
on the falling edge of RAS. During RAS-only refresh, the D
OUT
pin is kept in a high impedance state.
Fig. 11 - RAS-ONLY REFRESH (WE, D
IN
, A
10
= “H” or “L”)
RAS
CAS
A
0
to A
9
D
OUT
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
t
RC
t
RAS
t
RAH
t
RP
t
ASR
t
RPC
t
CRP
t
OFF
t
OH
HIGH-Z
“H” or “L”
ROW ADDRESS
DESCRIPTION
The CAS-before-RAS refresh is executed by bringing CAS “L” before RAS. By this timing combination, the MB814100A executes CAS-
before-RAS refresh. The row address input is not necessary because it is generated internally.
WE must be held “H” for the specified set up time (t
WSR
) before RAS goes “L” in order not to enter “test mode”.
Fig. 12 - CAS-BEFORE-RAS REFRESH (A
0
to A
10
, D
IN
= ”H” or ”L”)
RAS
CAS
D
OUT
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
WE
t
RC
t
RAS
t
CHR
t
RP
t
CSR
t
RPC
t
CPN
t
WSR
t
WHR
t
OFF
t
OH
HIGH-Z
“H” or “L”
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB814100A-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100A-80 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100C-60 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100C-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速頁面存取模式動態(tài)RAM) |
| MB814100D-60 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MB81416-10 | 制造商:Fuji Electric 功能描述:81416-10/MB |
| MB81416-12 | 制造商:Freescale Semiconductor 功能描述:81416-12 |
| MB814400C-70PJN | 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ |
| MB814405D-60PJN | 制造商:FUJITSU Component Ltd 功能描述: |
| MB8146112 | 制造商:FUJITSU 功能描述:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。