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參數(shù)資料
| 型號： | MB814100A-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| 中文描述： | 的CMOS 4米× 1位快速頁面模式的DRAM的CMOS（4分× 1位快速頁面存取模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 12/25頁 |
| 文件大小： | 309K |
| 代理商： | MB814100A-60 |
12
MB814100A-60/MB814100A-70/MB814100A-80
DESCRIPTION
The write cycle is executed by the same manner as read cycle except for the state of WE and D
IN
pins. The data on D
IN
pin is latched
with the later falling edge of CAS or WE and written into memory. In addition, during write cycle, t
RWL
and t
RAL
must be satisfied with the
specifications.
Fig. 6 - WRITE CYCLE (Early Write)
RAS
CAS
A
0
to A
10
WE
D
OUT
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
D
IN
V
IH
V
IL
t
RC
t
CRP
t
CSH
t
RCD
t
RSH
t
RP
t
CAS
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
CAL
t
RAL
t
RAS
ROW
ADD
COLUMN
ADD
HIGH-Z
t
WCS
t
WCH
VALID
DATA IN
t
DS
t
DH
“H” or “L”
相關PDF資料 |
PDF描述 |
|---|---|
| MB814100A-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100A-80 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100C-60 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁面存取模式動態(tài)RAM) |
| MB814100C-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速頁面存取模式動態(tài)RAM) |
| MB814100D-60 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MB81416-10 | 制造商:Fuji Electric 功能描述:81416-10/MB |
| MB81416-12 | 制造商:Freescale Semiconductor 功能描述:81416-12 |
| MB814400C-70PJN | 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ |
| MB814405D-60PJN | 制造商:FUJITSU Component Ltd 功能描述: |
| MB8146112 | 制造商:FUJITSU 功能描述:* |
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