參數(shù)資料
型號(hào): M5M4V16169DRT-7
廠商: Mitsubishi Electric Corporation
英文描述: 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述: 16MCDRAM:16米(100萬(wàn)字由16位)與16K的緩存內(nèi)存(1024字由16位)的SRAM
文件頁(yè)數(shù): 29/64頁(yè)
文件大?。?/td> 737K
代理商: M5M4V16169DRT-7
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
**-15 spec is the same as M5M4V16169TP/RT-15
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
SWITCHING CHARACTERISTICS
Symbol
Parameter
Unit
Min.
Max
20
tCBF
tKHA
tKHQX
tKHQZ
tKHAR
tKHQXR
Output Active Time from K-High Edge
tKHQZR
Output Disable Time from K-High Edge
tGLA
Access Time from G#-Low Edge
Buffer-Fill from DRAM Read Transfer
Access Time from K-High Edge
Output Active Time from K-High Edge
Output Disable Time from K-High Edge
Access Time from K-High Edge
ns
ns
ns
ns
ns
ns
Limits
Min.
Max
20
10
-8
-10
Output Active Time from G#-Low Edge
Output Disable Time from G#-High Edge
tGLQ
tGHQ
2
2
6.4
7
6.4
8
ns
ns
ns
ns
2
2
2
2
6.4
7
0
2
0
2
Min.
Max
20
-7
5.6
5.6
2
2
5.6
0
2
8
10
7
10
29
Min.
Max
20
15
3
3
12
3
3
5
-15
(Ta=0~70°C , Vdd=3.3±0.3V for -8,and -10, Vdd=3.3±0.15V for -7
Vss=0V, unless otherwise noted)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V16169DRT-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM