參數(shù)資料
型號: M5M4V16169DRT-7
廠商: Mitsubishi Electric Corporation
英文描述: 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述: 16MCDRAM:16米(100萬字由16位)與16K的緩存內(nèi)存(1024字由16位)的SRAM
文件頁數(shù): 21/64頁
文件大?。?/td> 737K
代理商: M5M4V16169DRT-7
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
As0-2
DQCl
DQCu
WM1
SRAM
DRAM
DQ0-15
WB1
WB2
WM2
DWT3/DWT4
DWT1
DWT2
DWT1/DWT3
DWT2/DWT4
addition
Load Byte Mask
(LBM)
0
1
2
3
4
5
6
7
128 set
0 ---
1023
DRAM row
0
255
DRAM
column
WB1/WB2
DWT3 / DWT4
Upper8
bit
Lower
8bit
Byte
mask
SRAM
0
1
0
1
1
1
0
0
written
byte
mask
0 1 0 1
1
0 1
0
0
Byte
mask bit
Write data / Mask data
Write / Mask logic
21
lower byte
upper byte
DQ0->
->DQ15
1 1 1 1
0
0
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V16169DRT-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM