參數(shù)資料
型號: M5M4V16169DRT-7
廠商: Mitsubishi Electric Corporation
英文描述: 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
中文描述: 16MCDRAM:16米(100萬字由16位)與16K的緩存內存(1024字由16位)的SRAM
文件頁數(shù): 24/64頁
文件大?。?/td> 737K
代理商: M5M4V16169DRT-7
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
(REV 1.0) Jul. 1998
MITSUBISHI ELECTRIC
K
2
3
4
5
6
7
8
9
10
11
12
13
14
1
As0-2
G#
DQ0-15
As3-11
L
Q1+1
D2
DQC(u / l)
WE#
CC0#
CC1#
ADF#
DES SR
DES SR
SPD SPD DES SW
SW
SR
SR
SR
SR
Q1
D1+2
C1
C2
C3
Q4
Q3
Q5
Q6
C4
C5
C6
C1
C2
C3
C4
C5
C6
Burst address is
not incremented
by DES, SPD.
ADF#=Low
is equal to
non-burst
mode.
"Insert wait" is possible.
Burst Mode (2)
M5M4V16169D keeps compatibility setting ADF# low or setting Burst length=1 by SCR cycle.
(Ad7, Ad8 and Ad9=0)
24
CMs#
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相關代理商/技術參數(shù)
參數(shù)描述
M5M4V16169DRT-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
M5M4V16169DTP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM