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參數(shù)資料
| 型號(hào)： | M30L0R8000T0ZAQE |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | AB 35C 7#12,28#16 PIN RECP |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 83/83頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000T0ZAQE |
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M30L0R8000T0, M30L0R8000B0
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R8000B0ZAQE | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQF | CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014 |
| M30L0R8000B0ZAQT | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L40C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| M30L40C-E3/4W | 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| M30L45C-E3/4W | 功能描述:肖特基二極管與整流器 45 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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