參數(shù)資料
型號(hào)： M30L0R8000T0ZAQE
廠商： 意法半導(dǎo)體
英文描述： AB 35C 7#12,28#16 PIN RECP
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 17/83頁(yè)
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQE
17/83
M30L0R8000T0, M30L0R8000B0
See
APPENDIX C.
,
Figure 21., Buffer Program
Flowchart and Pseudo Code
, for a suggested flow-
chart on using the Buffer Program command.
Buffer Enhanced Factory Program Command
The Buffer Enhanced Factory Program command
has been specially developed to speed up pro-
gramming in manufacturing environments where
the programming time is critical.
It is used to program one or more Write Buffer(s)
of 32 Words to a block. Once the device enters
Buffer Enhanced Factory Program mode, the
Write Buffer can be reloaded any number of times
as long as the address remains within the same
block. Only one block can be programmed at a
time.
The use of the Buffer Enhanced Factory Program
command requires certain operating conditions:
V
PP
must be set to V
PPH
V
DD
must be within operating range
Ambient temperature T
A
must be 30°C ± 10°C
The targeted block must be unlocked
The start address must be aligned with the
start of a 32 Word buffer boundary
The address must remain the Start Address
throughout programming.
Dual operations are not supported during the Buff-
er Enhanced Factory Program operation and the
command cannot be suspended.
If the block is protected, the Buffer Enhanced Fac-
tory Program operation will abort, the data in the
block will not be changed and the Status Register
will output the error.
The Buffer Enhanced Factory Program Command
consists of three phases: the Setup Phase, the
Program and Verify Phase, and the Exit Phase,
Please refer to
Table 6., Factory Program Com-
mand
for detail information.
■
■
■
■
■
■
Setup Phase.
The Buffer Enhanced Factory Pro-
gram command requires two Bus Write cycles to
initiate the command.
The first Bus Write cycle sets up the Buffer
Enhanced Factory Program command.
The second Bus Write cycle confirms the
command.
After the confirm command is issued, read opera-
tions output the contents of the Status Register.
The read Status Register command must not be
issued as it will be interpreted as data to program.
The Status Register P/E.C. Bit SR7 should be
read to check that the P/E.C. is ready to proceed
to the next phase.
■
■
If an error is detected, SR4 goes high (set to ‘1’)
and the Buffer Enhanced Factory Program opera-
tion is terminated. See Status Register section for
details on the error.
Program and Verify Phase.
The Program and
Verify Phase requires 32 cycles to program the 32
Words to the Write Buffer. The data is stored se-
quentially, starting at the first address of the Write
Buffer, until the Write Buffer is full (32 Words). To
program less than 32 Words, the remaining Words
should be programmed with FFFFh.
Three successive steps are required to issue and
execute the Program and Verify Phase of the com-
mand.
1.
Use one Bus Write operation to latch the Start
Address and the first Word to be programmed.
The Status Register Bank Write Status bit SR0
should be read to check that the P/E.C. is
ready for the next Word.
2.
Each subsequent Word to be programmed is
latched with a new Bus Write operation. The
address must remain the Start Address as the
P/E.C. increments the address location.If any
address that is not in the same block as the
Start Address is given, the Program and Verify
Phase terminates. Status Register bit SR0
should be read between each Bus Write cycle
to check that the P/E.C. is ready for the next
Word.
3.
Once the Write Buffer is full, the data is pro-
grammed sequentially to the memory array.
After the program operation the device auto-
matically verifies the data and reprograms if
necessary.
The Program and Verify phase can be repeated,
without re-issuing the command, to program addi-
tional 32 Word locations as long as the address re-
mains in the same block.
4.
Finally, after all Words, or the entire block
have been programmed, write one Bus Write
operation to any address outside the block
containing the Start Address, to terminate
Program and Verify Phase.
Status Register bit SR0 must be checked to deter-
mine whether the program operation is finished.
The Status Register may be checked for errors at
any time but it must be checked after the entire
block has been programmed.
Exit Phase.
Status Register P/E.C. bit SR7 set to
‘1’ indicates that the device has exited the Buffer
Enhanced Factory Program operation and re-
turned to Read Status Register mode. A full Status
Register check should be done to ensure that the
block has been successfully programmed. See the
section on the Status Register for more details.
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M30L40C-E3/4W 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
M30L45C-E3/4W 功能描述:肖特基二極管與整流器 45 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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