參數(shù)資料
型號(hào): M30L0R8000T0ZAQE
廠商: 意法半導(dǎo)體
英文描述: AB 35C 7#12,28#16 PIN RECP
中文描述: 256兆位(16Mb的x16插槽,多銀行,多層次,多突發(fā))1.8V電源快閃記憶體
文件頁(yè)數(shù): 72/83頁(yè)
文件大?。?/td> 1363K
代理商: M30L0R8000T0ZAQE
M30L0R8000T0, M30L0R8000B0
72/83
Figure 23. Block Erase Flowchart and Pseudo Code
Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase operations.
2. Any address within the bank can equally be used.
Write 20h (2)
AI10593
Start
Write Block
Address & D0h
Read Status
Register (2)
YES
NO
SR7 = 1
YES
NO
SR3 = 0
YES
SR4, SR5 = 1
VPP Invalid
Error (1)
Command
Sequence Error (1)
NO
NO
SR5 = 0
Erase Error (1)
End
YES
NO
SR1 = 0
Erase to Protected
Block Error (1)
YES
erase_command ( blockToErase ) {
writeToFlash (blockToErase, 0x20) ;
/*see note (2) */
writeToFlash (blockToErase, 0xD0) ;
/* only A14-A23 are significant */
/* Memory enters read status state after
the Erase Command */
} while (status_register.SR7== 0) ;
do {
status_register=readFlash (blockToErase) ;
/* see note (2) */
/* E or G must be toggled*/
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
if ( (status_register.SR4==1) && (status_register.SR5==1) )
/* command sequence error */
error_handler ( ) ;
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
if ( (status_register.SR5==1) )
/* erase error */
error_handler ( ) ;
}
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