參數(shù)資料
型號(hào)： M30L0R8000T0ZAQE
廠商： 意法半導(dǎo)體
英文描述： AB 35C 7#12,28#16 PIN RECP
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 41/83頁
文件大小： 1363K
代理商： M30L0R8000T0ZAQE
41/83
M30L0R8000T0, M30L0R8000B0
Table 21. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DD
Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=5MHz)
E = V
IL
, G = V
IH
13
15
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
23
25
mA
Continuous
25
27
mA
I
DD2
Supply Current
(Reset)
RP = V
SS
± 0.2V
50
110
μA
I
DD3
Supply Current (Standby)
E = V
DDQ
± 0.2V
K=V
ss
50
110
μA
I
DD4
Supply Current (Automatic Standby)
E = V
IL
, G = V
IH
50
110
μA
I
DD5
(1)
Supply Current (Program)
V
PP
= V
PPH
8
20
mA
V
PP
= V
DD
10
25
mA
Supply Current (Erase)
V
PP
= V
PPH
8
20
mA
V
PP
= V
DD
10
25
mA
I
DD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in another
Bank
23
40
mA
Program/Erase in one Bank,
Synchronous Read (Continuous
f=54MHz) in another Bank
35
52
mA
I
DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E = V
DDQ
± 0.2V
K=V
ss
50
110
μA
I
PP1(1)
V
PP
Supply Current (Program)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
V
PP
Supply Current (Erase)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
I
PP2
V
PP
Supply Current (Read)
V
PP
≤
V
DD
0.2
5
μA
I
PP3(1)
V
PP
Supply Current (Standby)
V
PP
≤
V
DD
0.2
5
μA
相關(guān)PDF資料
PDF描述
M30L0R8000B0ZAQE 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L40C 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
M30L40C-E3/4W 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
M30L45C-E3/4W 功能描述:肖特基二極管與整流器 45 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*