參數(shù)資料
型號： M30L0R8000T0ZAQE
廠商： 意法半導(dǎo)體
英文描述： AB 35C 7#12,28#16 PIN RECP
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁數(shù)： 65/83頁
文件大?。?/td> 1363K
代理商： M30L0R8000T0ZAQE
65/83
M30L0R8000T0, M30L0R8000B0
Table 42. Burst Read Information
Table 43. Bank and Erase Block Region Information
Note: 1. The variable P is a pointer which is defined at CFI offset 015h.
2. Bank Regions. There are two Bank Regions, see Tables
30
,
31
,
32
,
33
,
34
and
35
in
APPENDIX A.
Offset
Data
Description
Value
(P+1D)h = 127h
0004h
Page-mode read capability
bits 0-7 ’n’ such that 2
n
HEX value represents the number of read-page
bytes. See offset 0028h for device word width to
determine page-mode data output width.
16 Bytes
(P+1E)h = 128h
0004h
Number of synchronous mode read configuration fields that follow.
4
(P+1F)h = 129h
0001h
Synchronous mode read capability configuration 1
bit 3-7 Reserved
bit 0-2 ’n’ such that 2
n+1
HEX value represents the maximum number of
continuous synchronous reads when the device is configured
for its maximum word width. A value of 07h indicates that the
device is capable of continuous linear bursts that will output
data until the internal burst counter reaches the end of the
device’s burstable address space. This field’s 3-bit value can
be written directly to the read configuration register bit 0-2 if
the device is configured for its maximum word width. See
offset 0028h for word width to determine the burst data output
width.
4
(P+20)h = 12Ah
0002h
Synchronous mode read capability configuration 2
8
(P-21)h = 12Bh
(P+22)h = 12Ch
0003h
0007h
Synchronous mode read capability configuration 3
16
Synchronous mode read capability configuration 4
Cont.
Flash memory (top)
Flash memory (bottom)
Description
Offset
Data
Offset
Data
(P+23)h = 12Dh
02h
(P+23)h = 12Dh
02h
Number of Bank Regions within the device
相關(guān)PDF資料
PDF描述
M30L0R8000B0ZAQE 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014
M30L0R8000B0ZAQT 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L40C 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier
M30L40C-E3/4W 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
M30L45C-E3/4W 功能描述:肖特基二極管與整流器 45 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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