參數(shù)資料
型號(hào)： M25PX32-VMW6E
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 49/63頁(yè)
文件大?。?/td> 394K
代理商： M25PX32-VMW6E
M25PX32
Power-up and Power-down
49/63
7
Power-up and Power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on V
CC
) until V
CC
reaches the correct value:
V
CC
(min) at Power-up, and then for a further delay of t
VSL
V
SS
at Power-down
A safe configuration is provided in
Section 3: SPI modes
.
●
●
To avoid data corruption and inadvertent write operations during Power-up, a Power On
Reset (POR) circuit is included. The logic inside the device is held reset while V
CC
is less
than the Power On Reset (POR) threshold voltage, V
WI
– all operations are disabled, and
the device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Dual Input Fast
Program (DIFP), Program OTP (POTP), Subsector Erase (SSE), Sector Erase (SE), Bulk
Erase (BE), Write Status Register (WRSR) and Write to Lock Register (WRLR) instructions
until a time delay of t
PUW
has elapsed after the moment that V
CC
rises above the V
WI
threshold. However, the correct operation of the device is not guaranteed if, by this time, V
CC
is still below V
CC
(min). No Write Status Register, Program or Erase instructions should be
sent until the later of:
t
PUW
after V
CC
has passed the V
WI
threshold
t
VSL
after V
CC
has passed the V
CC
(min) level
These values are specified in
Table 11
.
●
●
If the time, t
VSL
, has elapsed, after V
CC
rises above V
CC
(min), the device can be selected for
READ instructions even if the t
PUW
delay has not yet fully elapsed.
After Power-up, the device is in the following state:
The device is in the Standby Power mode (not the Deep Power-down mode).
The Write Enable Latch (WEL) bit is reset.
The Write In Progress (WIP) bit is reset.
The Lock Registers are configured as: (Write Lock bit, Lock Down bit) = (0,0)
●
●
●
●
Normal precautions must be taken for supply line decoupling, to stabilize the V
CC
supply.
Each device in a system should have the V
CC
line decoupled by a suitable capacitor close to
the package pins (generally, this capacitor is of the order of 100 nF).
At Power-down, when V
CC
drops from the operating voltage, to below the Power On Reset
(POR) threshold voltage, V
WI
, all operations are disabled and the device does not respond
to any instruction. (The designer needs to be aware that if Power-down occurs while a Write,
Program or Erase cycle is in progress, some data corruption may result.)
V
PPH
must be applied only when V
CC
is stable and in the V
CC
min to V
CC
max voltage
range.
●
相關(guān)PDF資料
PDF描述
M25PX32-VMW6F 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32-VMF6E 4 Mbit Uniform Sector, Serial Flash Memory
M25PX32-VMF6F 4 Mbit Uniform Sector, Serial Flash Memory
M27128A NMOS 128K 16K x 8 UV EPROM
M27128A-20F1 NMOS 128K 16K x 8 UV EPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PX32-VMW6EBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays
M25PX32-VMW6F 功能描述:IC FLASH 32MBIT 75MHZ 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱:71P71804S200BQ
M25PX32-VMW6FBA 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M25PX32-VMW6Y 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays
M25PX32-VZM6E 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 75MHZ 24TBGA
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